Due to the increase in the fraction of rutile phase, the optical band gap value decreases from ~3.35 eV to ~3.29 eV.
金红石相含量的增加造成了多晶TiO_2薄膜结构的无序,使光学带隙值从～3.35 eV降低到～3.29 eV。
参考来源 - 多晶二氧化钛薄膜的制备、结构和光学性质Due to big carrier concentration and optical band gap, transparent conductive oxide thin films exhibit outstanding optical and electrical properties, such as low resistively and high transmittance in the visible range etc.
透明导电氧化物薄膜材料具有大的载流子浓度和光学禁带宽度因而表现出优良的光电特性,如:低的电阻率和高的可见光透过率等。
参考来源 - 制备ITO薄膜的工艺研究Its optical band gap has a close relationship with the structure, particularly the content of the sp~3 hybrid bonds and the C = C bonds.
薄膜光学带隙与薄膜的结构有很大关系,特别是与薄膜中sp~3杂化键以及C=C双键含量具有直接关系。
参考来源 - 高光洁度类金刚石碳膜的制备与性能研究·2,447,543篇论文数据，部分数据来源于NoteExpress
Results indicate that the optical band gap of the CN x films is decreased with the increasing nitrogen concentration, accompanied with the reflectance increase of the films.
结果表明：随着薄膜中氮含量的增加，碳氮薄膜的光学禁带宽度减小，红外反射率增加。
The ultraviolet absorption peak narrows, absorption intensity increases, the absorption margin becomes steep and moves to longer wavelength, the optical band gap decreases as well.
紫外吸收峰变窄，强度增加，吸收边变得陡峭并向长波方向移动，光学带隙降低。
In comparison with that of the bulk Ge crystals, the nanocrystalline Ge show a blue shift of energy and the optical band gap increases with decreasing of the particle size of the nanocrystallites.
研究表明：镶嵌在绝缘介质薄膜中的纳米锗颗粒的能带是量子化的，随着纳米锗粒子平均尺寸的减小，其吸收带隙增加，吸收带边蓝移的程度相应增大。
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